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CPH5802 rev.0 i page 1 of 5 i www.onsemi.com features composite type with a p-channel sillicon mosfet (mch3306) and a schottky barrier diode (sbs004) contained in one package facilitating high-density mounting. [mosfet] low on-resistance. ultrahigh-speed switching. ultralow voltage drive (1.8v drive). [sbd] short reverse recovery time . low forward voltage . ordering number : enn6899 package dimensions unit : mm 2171 [CPH5802] 1.6 0.6 0.6 2.8 0.2 2.9 0.05 0.4 0.95 0.2 0.9 0.7 0.15 0.4 12 3 4 5 1 : cathode 2 : drain 3 : gate 4 : source 5 : anode sanyo : cph5 specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss -- 20 v gate-to-source voltage v gss 10 v drain current (dc) i d -- 2 a drain current (pulse) i dp pw 10 s, duty cycle 1% --8 a allowable power dissipation p d mounted on a ceramic board (600mm 2 ? 0.8mm) 1unit 0.9 w channel temperature tch 150 c storage temperature tstg - -55 to +125 c [sbd] repetitive peak reverse voltage v rrm 15 v nonrepetitive peak reverse surge voltage v rsm 15 v a verage output current i o 1a surge forward current i fsm 50hz sine wave, 1 cycle 10 a junction temperature tj - -55 to +125 c storage temperature tstg - -55 to +125 c marking : qc CPH5802 mosfet : p-channel silicon mosfet sbd : schottky barrier diode dc / dc converter applications ? 2011, scillc. all rights reserved. jan-2011, rev. 0 www.onsemi.com publication order number: CPH5802/d
CPH5802 rev.0 i page 2 of 5 i www.onsemi.com electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0 --20 v zero-gate voltage drain current i dss v ds =--20v, v gs =0 --10 a gate-to-source leakage current i gss v gs = 8v, v ds =0 10 a cutoff voltage v gs (off) v ds =--10v, i d =--1ma --0.3 --1.0 v forward transfer admittance ? yfs ? v ds =--10v, i d =--1a 2.1 3.0 s r ds (on)1 i d =--1a, v gs =--4v 110 145 m ? static drain-to-source on-state resistance r ds (on)2 i d =--0.5a, v gs =- -2.5v 140 200 m ? r ds (on)3 i d =--0.1a, v gs =- -1.8v 180 260 m ? input capacitance ciss v ds =--10v, f=1mhz 410 pf output capacitance coss v ds =--10v, f=1mhz 60 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 40 pf t urn-on delay time t d (on) see specified test circuit 9 ns rise time t r see specified test circuit 27 ns t urn-off delay time t d (off) see specified test circuit 42 ns fall time t f see specified test circuit 38 ns t otal gate charge qg v ds =--10v, v gs =- -10v, i d =--2a 10 nc gate-to-source charge qgs v ds =--10v, v gs =- -10v, i d =--2a 0.6 nc gate-to-drain ?iller?charge qgd v ds =--10v, v gs =- -10v, i d =--2a 1.2 nc diode forward voltage v sd i s =--2a, v gs =0 --0.88 --1.2 v [sbd] reverse voltage v r i r =1ma 15 v forward voltage v f 1i f =0.5a 0.30 0.35 v v f 2i f =1a 0.35 0.40 v reverse current i r v r =6v 500 a interterminal capacitance c v r =10v, f=1mhz, 1 cycle 42 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 15 ns thermal resistance rth(j-a) mounted on a ceramic board (600mm 2 ? 0.8mm) 110 c / w electrical connection (top view) switching time test circuit trr test circuit [mosfet] [sbd] pw=10 s d.c. 1% p. g 50 ? g s d i d = --1a r l = --10 ? v dd = --10v v out CPH5802 (mosfet) v in 0v - -4v v in duty 10% 50 ? 100 ? 10 ? - -5v t rr 100ma 100ma 10ma 10 s asg cd
CPH5802 rev.0 i page 3 of 5 i www.onsemi.com static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? - -0.5 - -1.0 - -1.5 - -2.0 - -2.5 - -3.0 - -3.5 - -4.0 - -60 --40 --20 0 20 40 60 80 100 120 140 160 0--2--4- -6 --8 --10 gate-to-source voltage, v gs -- v r ds (on) -- v gs it02755 0 0 - -0.4 - -0.8 - -1.6 - -2.0 - -0.2 - -1.2 0 50 100 150 200 250 300 350 400 0 - -0.4 --0.6 --0.8 --1.0 - -0.1 --0.3 --0.5 --0.7 --0.9 drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a v gs = --1.0v - -1.5v -- 1 . 8v it02753 0- -0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a v ds = --10v 25 c - -25 c t a=75 c it02754 ambient temperature, ta -- c r ds (on) -- ta it02756 50 100 150 200 250 300 350 400 0 t a=25 c - -1.0a i d = --0.1a -- 2 . 5v -- 3 . 0v -- 4 . 0v -- 1 0 v - -0.5a i d = --0.1a, v gs = --1.8v i d = --1.0a, v gs = --4.0v i d = --0.5a, v gs = --2.5v 1.0 7 5 3 2 10 100 7 5 3 2 7 5 3 2 1000 drain current, i d -- a sw time -- i d switching time, sw time -- ns v dd = --10v v gs = --4v t d (on) t d (off) t r t f it02759 ciss, coss, crss -- v ds drain current, i d -- a it02757 - -0.01 0.1 - -0.1 --1.0 23 57 23 57 23 5 - -0.1 --1.0 23 5 23 57 10 1.0 7 5 3 2 7 5 3 2 f orward transfer admittance, ? y fs ? -- s ? y fs ? -- i d v ds = --10v 75 c 25 c t a= --25 c it02758 - -0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 - -0.01 - -0.1 - -10 - -1.0 7 5 3 2 7 5 3 2 7 5 3 2 diode forward voltage, v sd -- v f orward current, i f -- a i f -- v sd v gs =0 - -25 c 25 c t a=75 c [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] [mosfet] 0--2--4- -6 --8 --10 --12 --14 --16 --18 --20 10 100 1000 7 5 3 2 7 5 3 2 drain-to-source voltage, v ds -- v ciss, coss, crss -- pf f=1mhz ciss coss crss it02760
CPH5802 rev.0 i page 4 of 5 i www.onsemi.com 01234567891011 0 -- 1 -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 -- 9 - -10 t otal gate charge, qg -- nc v gs -- qg gate-to-source voltage, v gs -- v v ds = --10v i d = --2a it02761 [mosfet] [mosfet] [mosfet] 0 0 20 40 0.2 60 0.4 80 100 120 0.8 0.9 0.6 1.2 1.0 140 160 ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w it02763 mounted on a ceramic board(600mm 2 ? 0.8mm) 1unit a s o drain-to-source voltage, v ds -- v drain current, i d -- a 2 3 5 7 2 3 5 7 2 3 5 7 - -10 - -1.0 - -0.1 - -0.01 23 57 - -0.01 - -0.1 23 57 - -1.0 23 57 - -10 23 5 it02762 t a=25 c single pulse mounted on a ceramic board(600mm 2 ? 0.8mm) 1unit i dp = --8a i d = --2a operation in this area is limited by r ds (on). 100 s 100ms dc operation 1ms 10ms <10 s 1.0 10 2 2 3 5 100 1000 1.0 10 7 2 3 5 7 2 3 5 7 357 2 reverse voltage, v r -- v c -- v r interterminal capacitance, c -- pf f=1mhz 0 100 10 1.0 0.1 0.01 5 7 3 2 5 7 3 2 5 7 3 2 5 7 3 2 15 510 reverse voltage, v r -- v i r -- v r reverse current, i r -- ma 0 0 0.2 0.4 0.6 0.8 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 1.4 av erage forward current, i o -- a p f (av) -- i o av erage forward power dissipation, p f (av) -- w 0 0.1 0.01 0.3 0.4 0.5 0.1 0.2 1.0 3 2 7 5 3 2 7 5 3 2 f orward voltage, v f -- v f orward current, i f -- a i f -- v f ta =125 c 25 c 50 c 75 c 100 c ta=1 25 c 25 c 50 c 75 c 100 c it00622 it00623 it00624 it00625 [sbd] [sbd] [sbd] [sbd] (1) rectangular wave =60 (2) rectangular wave =120 (3) rectangular wave =180 (4) sine wave =180 180 360 360 rectangular wave (1) (2) (4) (3) sine wave
CPH5802 rev.0 i page 5 of 5 i www.onsemi.com 7 0.01 23 7 0.1 0 52 2 37 1.0 5 12 10 8 6 4 2 3 t ime, t -- s surge forward current, i fsm (peak) -- a it00626 [sbd] is 20ms t current waveform 50hz sine wave i s -- t CPH5802/d

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